Electron beam recrystallization of amorphous semiconductor materials

Nucleation and growth of crystalline films of silicon, germanium, and cadmium sulfide on substrates of plastic and glass were investigated. Amorphous films of germanium, silicon, and cadmium sulfide on amorphous substrates of glass and plastic were converted to the crystalline condition by electron bombardment

Lithiation of silicon via lithium Zintl-defect complexes

An extensive search for low-energy lithium defects in crystalline silicon using density-functional-theory methods and the ab initio random structure searching (AIRSS) method shows that the four-lithium-atom substitutional point defect is exceptionally stable. This defect consists of four lithium atoms with strong ionic bonds to the four under-coordinated atoms of a silicon vacancy defect, similar to the bonding of metal ions in Zintl phases. This complex is stable over a range of silicon environments, indicating that it may aid amorphization of crystalline silicon and form upon delithiation of the silicon anode of a Li-ion rechargeable battery.Comment: 4 pages, 3 figure

Probing ultrafast carrier dynamics and nonlinear absorption and refraction in core-shell silicon nanowires

We investigate the relaxation dynamics of photogenerated carriers in silicon nanowires consisting of a crystalline core and a surrounding amorphous shell, using femtosecond time-resolved differential reflectivity and transmission spectroscopy at photon energies of 3.15 eV and 1.57 eV. The complex behavior of the differential transmission and reflectivity transients is the mixed contributions from the crystalline core and the amorphous silicon on the nanowire surface and the substrate where competing effects of state filling and photoinduced absorption govern the carrier dynamics. Faster relaxation rates are observed on increasing the photo-generated carrier density. Independent experimental results on crystalline silicon-on-sapphire help us in separating the contributions from the carrier dynamics in crystalline core and the amorphous regions in the nanowire samples. Further, single beam z-scan nonlinear transmission experiments at 1.57 eV in both open and close aperture configurations yield two-photon absorption coefficient \$beta$ (~3 cm/GW) and nonlinear refraction coefficient \$gamma$ (-2.5x10^-4 cm2/GW).Comment: 6 pages, 6 figure

Dynamic Nuclear Polarization in Silicon Microparticles

We report record high Si-29 spin polarization obtained using dynamic nuclear polarization in microcrystalline silicon powder. Unpaired electrons in this silicon powder are due to dangling bonds in the amorphous region of this intrinsically heterogeneous sample. Si-29 nuclei in the amorphous region become polarized by forced electron-nuclear spin flips driven by off-resonant microwave radiation while nuclei in the crystalline region are polarized by spin diffusion across crystalline boundaries. Hyperpolarized silicon microparticles have long T1 relaxation times and could be used as tracers for magnetic resonance imaging.Comment: 4 pages, 5 figures, published versio

Real-time Measurement of Stress and Damage Evolution During Initial Lithiation of Crystalline Silicon

Crystalline to amorphous phase transformation during initial lithiation in (100) silicon-wafers is studied in an electrochemical cell with lithium metal as the counter and reference electrode. It is demonstrated that severe stress jumps across the phase boundary lead to fracture and damage, which is an essential consideration in designing silicon based anodes for lithium ion batteries. During initial lithiation, a moving phase boundary advances into the wafer starting from the surface facing the lithium electrode, transforming crystalline silicon into amorphous LixSi. The resulting biaxial compressive stress in the amorphous layer is measured in situ and it was observed to be ca. 0.5 GPa. HRTEM images reveal that the crystalline-amorphous phase boundary is very sharp, with a thickness of ~ 1 nm. Upon delithiation, the stress rapidly reverses, becomes tensile and the amorphous layer begins to deform plastically at around 0.5 GPa. With continued delithiation, the yield stress increases in magnitude, culminating in sudden fracture of the amorphous layer into micro-fragments and the cracks extend into the underlying crystalline silicon.Comment: 12 pages, 5 figure

Optical Absorption Measurements on Crystalline Silicon at 1550nm

Crystalline silicon is currently being discussed as test-mass material for future generations of gravitational wave detectors that will operate at cryogenic temperatures. We present optical absorption measurements on a large-dimension sample of crystalline silicon at a wavelength of 1550nm at room temperature. The absorption was measured in a monolithic cavity setup using the photo-thermal self-phase modulation technique. The result for the absorption coefficient of this float-zone sample with a specific resistivity of 11kOhm cm was measured to be \alpha_A=(264 +/- 39)ppm/cm.Comment: 11 pages, 6 figures, 1 tabl

Porous silicon solar cells

We developed a new process for the fabrication of crystalline solar cell, based on an ultrathin silicon membrane, taking advantage of porous silicon technology. The suggested architecture allows the costs reduction of silicon based solar cell reusing the same wafer to produce a great number of membranes. The architectures combines the efficiency of crystalline silicon solar cell, with the great absorption of porous silicon, and with a more efficient way to use the material. The new process faces the main challenge to achieve an effective and not expensive passivation of the porous silicon surface, in order to achieve an efficient photovoltaic device. At the same time the process suggests a smart way to selective doping of the macroporous silicon layers despite the through-going pores. © 2015 IEEE. SciVal Topic Prominence  Topic: Porous silicon | Silicon | macroporous silicon Prominence percentile: 66.984  Author keywords nanofabricationporous siliconsilicon nanoelectronicssolar cells Indexed keywords Engineering controlled terms: Crystalline materialsNanoelectronicsNanostructured materialsNanotechnologyPorous siliconSiliconSilicon wafersSolar cells Engineering uncontrolled terms Crystalline silicon solar cellsCrystalline solar cellsMacro porous siliconPhotovoltaic devicesPorous silicon surfacesPorous silicon technologySilicon nanoelectronicsUltrathin silicon membrane Engineering main heading: Silicon solar cells ISBN: 978-146738155-0 Source Type: Conference Proceeding Original language: English DOI: 10.1109/NANO.2015.7388710 Document Type: Conference Paper Sponsors: Nanotechnology Council Publisher: Institute of Electrical and Electronics Engineers Inc. References (9) View in search results format ▻ All Export  Print  E-mail Save to PDF Create bibliography 1 (2012) International Technology Roadmap for Photovoltaics Results 2012. Cited 24 times. ITRPV, Third Edition, Berlin 2012 www.ITRPV.net 2 Lehmann, V., Honlein, W., Stengl, R., Willer, J., Wendt, H. (1992) Verfahren Zur Herstellung Einer Solarzelle Aus Einer Substratscheibe. Cited 6 times. German patent DE4204455C1; Filing date: 29. 01. 3 Brendel, R., Ernst, M. Macroporous Si as an absorber for thin-film solar cells (2010) Physica Status Solidi - Rapid Research Letters, 4 (1-2), pp. 40-42. Cited 22 times. http://www3.interscience.wiley.com/cgi-bin/fulltext/123215552/PDFSTART doi: 10.1002/pssr.200903372 Locate full-text(opens in a new window) View at Publisher 4 Ernst, M., Brendel, R., Ferré, R., Harder, N.-P. Thin macroporous silicon heterojunction solar cells (2012) Physica Status Solidi - Rapid Research Letters, 6 (5), pp. 187-189. Cited 16 times. doi: 10.1002/pssr.201206113 Locate full-text(opens in a new window) View at Publisher 5 Ernst, M., Brendel, R. Macroporous silicon solar cells with an epitaxial emitter (2013) IEEE Journal of Photovoltaics, 3 (2), art. no. 6472253, pp. 723-729. Cited 7 times. doi: 10.1109/JPHOTOV.2013.2247094 Locate full-text(opens in a new window) View at Publisher 6 Ernst, M., Schulte-Huxel, H., Niepelt, R., Kajari-Schröder, S., Brendel, R. Thin crystalline macroporous silicon solar cells with ion implanted emitter (Open Access) (2013) Energy Procedia, 38, pp. 910-918. Cited 2 times. http://www.sciencedirect.com/science/journal/18766102 doi: 10.1016/j.egypro.2013.07.364 Locate full-text(opens in a new window) View at Publisher 7 Nenzi, P., Kholostov, K., Crescenzi, R., Bondarenka, H., Bondarenko, V., Balucani, M. Electrochemically etched TSV for porous silicon interposer technologies (2013) Proceedings - Electronic Components and Technology Conference, art. no. 6575887, pp. 2201-2207. Cited 2 times. ISBN: 978-147990233-0 doi: 10.1109/ECTC.2013.6575887 Locate full-text(opens in a new window) View at Publisher 8 Perticaroli, S., Varlamava, V., Palma, F. Microwave sensing of nanostructured semiconductor surfaces (2014) Applied Physics Letters, 104 (1), art. no. 013110. Cited 3 times. doi: 10.1063/1.4861424 Locate full-text(opens in a new window) View at Publisher 9 De Cesare, G., Caputo, D., Tucci, M. Electrical properties of ITO/crystalline-silicon contact at different deposition temperatures (2012) IEEE Electron Device Letters, 33 (3), art. no. 6142006, pp. 327-329. Cited 28 times. doi: 10.1109/LED.2011.2180356 Locate full-text(opens in a new window) View at Publisher © Copyright 2017 Elsevier B.V., All rights reserved. ◅ Back to results ◅ Previous 3of10 Next ▻  Top of page Metrics Learn more about article metrics in Scopus (opens in a new window)  0 Citations in Scopus 0 Learn more about Field-Weighted Citation Impact Field-Weighted Citation Impact PlumX Metrics Usage, Captures, Mentions, Social Media and Citations beyond Scopus.  Cited by 0 documents Inform me when this document is cited in Scopus: Set citation alert ▻ Set citation feed ▻ Related documents Thin crystalline macroporous silicon solar cells with ion implanted emitter Ernst, M. , Schulte-Huxel, H. , Niepelt, R. (2013) Energy Procedia Multilayer etching for kerf-free solar cells from macroporous silicon Schäfer, S. , Ernst, M. , Kajari-Schröder, S. (2013) Energy Procedia Macroporous silicon solar cells with an epitaxial emitter Ernst, M. , Brendel, R. (2013) IEEE Journal of Photovoltaics View all related documents based on references Find more related documents in Scopus based on: Authors ▻ Keywords ▻ About Scopus What is Scopus Content coverage Scopus blog Scopus API Privacy matters Language 日本語に切り替える 切换到简体中文 切換到繁體中文 Русский язык Customer Service Help Contact us Elsevier Terms and conditions ↗ Privacy policy ↗ Copyright © 2018 Elsevier B.V ↗. All rights reserved. Scopus® is a registered trademark of Elsevier B.V. We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies. RELX Group We developed a new process for the fabrication of crystalline solar cell, based on an ultrathin silicon membrane, taking advantage of porous silicon technology. The suggested architecture allows the costs reduction of silicon based solar cell reusing the same wafer to produce a great number of membranes. The architectures combines the efficiency of crystalline silicon solar cell, with the great absorption of porous silicon, and with a more efficient way to use the material. The new process faces the main challenge to achieve an effective and not expensive passivation of the porous silicon surface, in order to achieve an efficient photovoltaic device. At the same time the process suggests a smart way to selective doping of the macroporous silicon layers despite the through-going pores

Laser annealing of silicon on sapphire

Silicon-implanted silicon-on-sapphire wafers have been annealed by 50-ns pulses from a Q-switched Nd : YAG laser. The samples have been analyzed by channeling and by omega-scan x-ray double diffraction. After irradiation with pulses of a fluence of about 5 J cm^–2 the crystalline quality of the silicon layer is found to be better than in the as-grown state